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BAS116L
BAS116L
主要參數(shù)

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

特性

  • Switching time typical: trr = 0.8 μs

  • Low leakage current typical: IR = 3 pA

  • Repetitive peak reverse voltage: VRRM ≤ 85 V

  • Low capacitance typical: Cd = 2 pF

  • Leadless ultra small SMD plastic package

  • Low package height of 0.48 mm

  • AEC-Q101 qualified


目標應用

  • Low-leakage current applications

  • General-purpose switching


參數(shù)類型

型號Package versionPackage nameSize (mm)VR [max] (V)IFSM [max] (A)VF [max] (mV)IR [max] (nA)IFRM (mA)Configurationtrr [max] (ns)IF [max] (mA)Cd [max] (pF)
BAS116LSOD882DFN1006-21 x 0.6 x 0.487541000@IF=10mA5@VR=75V700single30003252